A Novel 4H-SiC Double Trench MOSFET with Built-In MOS Channel Diode for Improved Switching Performance

This study proposed a novel 4H-SiC double trench metal-oxide-semiconductor field-effect-transistor (DTMCD-MOSFET) structure with built-in MOS channel diode. Further, its characteristics were analyzed using TCAD simulation. The DTMCD-MOSFET comprised active and dummy gates that divided horizontally; the diode operated through gate p-base N+ source regions at bottom of gate. Because bult-in was positioned bottom, DTMCD-MOSEFT minimized static deterioration. Despite having 5.2% higher specific on-resistance (Ron-sp) than double-trench MOSFET (DT-MOSFET), exhibited significantly superior body switching properties. In comparison to DT-MOSFET, turn-on voltage (VF) reverse recovery charge (Qrr) decreased by 27.2 30.2%, respectively, parasitic gate-drain capacitance (Crss) improved 89.4%. Thus, compared total energy loss (Etot) reduced 41.4%.